Εικόνα | KEY Part # / Κατασκευαστής | Περιγραφή / PDF | Ποσότητα / RFQ |
---|---|---|---|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
18176τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
14615τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
17624τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
17080τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
18490τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
27150τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
26869τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
25726τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
20829τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
26040τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
14296τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
18678τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
23312τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
20224τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
17141τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production. |
24090τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1333 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15623τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
18022τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
16063τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
25323τεμ |