DDR3


Εικόνα KEY Part # / Κατασκευαστής Περιγραφή / PDF Ποσότητα / RFQ
K4B4G0846D-BMK0

K4B4G0846D-BMK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

18176τεμ

K4B4G0846D-BMMA

K4B4G0846D-BMMA

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

14615τεμ

K4B4G0846D-BYH9

K4B4G0846D-BYH9

Samsung Semiconductor

4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

17624τεμ

K4B4G0846D-BYK0

K4B4G0846D-BYK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

17080τεμ

K4B4G0846D-BYMA

K4B4G0846D-BYMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

18490τεμ

K4B4G0846D-BYNB

K4B4G0846D-BYNB

Samsung Semiconductor

4 Gb 512M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

27150τεμ

K4B4G0846E-BCK0

K4B4G0846E-BCK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

26869τεμ

K4B4G0846E-BCMA

K4B4G0846E-BCMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

25726τεμ

K4B4G0846E-BMK0

K4B4G0846E-BMK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

20829τεμ

K4B4G0846E-BMMA

K4B4G0846E-BMMA

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

26040τεμ

K4B4G0846E-BYK0

K4B4G0846E-BYK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

14296τεμ

K4B4G0846E-BYMA

K4B4G0846E-BYMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

18678τεμ

K4B4G0846E-YCK0

K4B4G0846E-YCK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

23312τεμ

K4B4G0846E-YCMA

K4B4G0846E-YCMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

20224τεμ

K4B4G0846R-BFMA

K4B4G0846R-BFMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

17141τεμ

K4B4G0846R-BHMA

K4B4G0846R-BHMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production.

24090τεμ

K4B4G1646D-BCH9

K4B4G1646D-BCH9

Samsung Semiconductor

4 Gb 256M x 16 1333 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

15623τεμ

K4B4G1646D-BCK0

K4B4G1646D-BCK0

Samsung Semiconductor

4 Gb 256M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

18022τεμ

K4B4G1646D-BCMA

K4B4G1646D-BCMA

Samsung Semiconductor

4 Gb 256M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

16063τεμ

K4B4G1646D-BCNB

K4B4G1646D-BCNB

Samsung Semiconductor

4 Gb 256M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

25323τεμ