Εικόνα | KEY Part # / Κατασκευαστής | Περιγραφή / PDF | Ποσότητα / RFQ |
---|---|---|---|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
24999τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production. |
21860τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
20248τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21593τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
20056τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
21447τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19892τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
21068τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
18472τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15107τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
19193τεμ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
23462τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19442τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
25880τεμ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
17661τεμ |