Εικόνα | KEY Part # / Κατασκευαστής | Περιγραφή / PDF | Ποσότητα / RFQ |
---|---|---|---|
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Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
16372τεμ |
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Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
18111τεμ |
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Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
14254τεμ |
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Samsung Semiconductor |
12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
16007τεμ |
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Samsung Semiconductor |
12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23219τεμ |
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Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
14653τεμ |
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Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
15796τεμ |
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Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
20969τεμ |
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Samsung Semiconductor |
16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
17160τεμ |
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Samsung Semiconductor |
16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
21953τεμ |
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Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
17994τεμ |
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Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23172τεμ |
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Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
21588τεμ |
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Samsung Semiconductor |
8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
24362τεμ |
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Samsung Semiconductor |
8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
16747τεμ |
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Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
22839τεμ |
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Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23654τεμ |
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Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
22586τεμ |
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Samsung Semiconductor |
32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
14789τεμ |
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Samsung Semiconductor |
32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
18364τεμ |