LPDDR4, K4F2E3S4HA-GHCL, K4F2E3S4HA-GUCL, 1

KEY Part # / Κατασκευαστής	Περιγραφή / PDF	Ποσότητα / RFQ
K4F2E3S4HA-GFCL Samsung Semiconductor	12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	16372τεμ
K4F2E3S4HA-GHCL Samsung Semiconductor	12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	18111τεμ
K4F2E3S4HA-GUCL Samsung Semiconductor	12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.	14254τεμ
K4F2E3S4HM-MFCJ Samsung Semiconductor	12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	16007τεμ
K4F2E3S4HM-MHCJ Samsung Semiconductor	12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	23219τεμ
K4F4E3S4HF-GFCJ Samsung Semiconductor	4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	14653τεμ
K4F4E3S4HF-GHCJ Samsung Semiconductor	4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	15796τεμ
K4F4E3S4HF-GUCJ Samsung Semiconductor	4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.	20969τεμ
K4F6E3D4HB-MFCJ Samsung Semiconductor	16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	17160τεμ
K4F6E3D4HB-MHCJ Samsung Semiconductor	16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	21953τεμ
K4F6E3S4HM-GFCL Samsung Semiconductor	16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	17994τεμ
K4F6E3S4HM-GHCL Samsung Semiconductor	16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	23172τεμ
K4F6E3S4HM-GUCL Samsung Semiconductor	16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.	21588τεμ
K4F8E3S4HB-MFCJ Samsung Semiconductor	8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	24362τεμ
K4F8E3S4HB-MHCJ Samsung Semiconductor	8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	16747τεμ
K4F8E3S4HD-GFCL Samsung Semiconductor	8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	22839τεμ
K4F8E3S4HD-GHCL Samsung Semiconductor	8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	23654τεμ
K4F8E3S4HD-GUCL Samsung Semiconductor	8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.	22586τεμ
K4FBE3D4HM-GFCL Samsung Semiconductor	32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	14789τεμ
K4FBE3D4HM-GHCL Samsung Semiconductor	32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	18364τεμ

LPDDR4

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