ISSI IS29GL128 NOR Flash Memory Devices
ISSI IS29GL128 NOR Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The IS29GL128 memory devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption. The IS29GL128 memory devices are available in TSOP and BGA packaging options.
Features
8-word/16-byte page read buffer32-word/64-byte write buffer reduces overall programming time for multiple-word updatesSecured Silicon Sector (SSR) region512-word/1024-byte sector for permanent, secure identification256-word Factory Locked SSR and 256-word customer locked SSRUniform 64Kword/128KB sector architectureSuspend and resume commands for the program and erase operationsWrite operation status bits indicate program and erase operation completion
Specifications
Fast access time at -40°C to +125°C:
70ns at a VCC range from 3V to 3.6V and VIO range from 3V to 3.6V1.65V to 3.6V VIO input/outputAll input levels (address, control, and DQ input levels) and outputs are determined by the voltage on VIO input
70ns at a VCC range from 3V to 3.6V and VIO range from 3V to 3.6V1.65V to 3.6V VIO input/outputAll input levels (address, control, and DQ input levels) and outputs are determined by the voltage on VIO input
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