Samsung Semiconductor

At this year's MWC in Barcelona, Samsung Semiconductor exhibited its latest solutions and products for mobile applications

Reference server design guidelines for NGSFF SSD from Samsung describing Mission Peak architecture and other details.

Watch the video to check out Samsung NF1 SSD, small form factor that has high capacity and compatibility.

Greater memory will be a critical part of the design and implementation of 5G networks. To address the advanced memory needs of 5G networks, Samsung offers a growing array of products.

Watch the video below to check out Samsung Z-SSD, an SSD that boasts a new level of performance.

Samsung Z-SSD SZ985, a new type of Ultra-low Latency SSD for Enterprise and Data Centers

Samsung announced today that 46 of its new product innovations have been recognized as CES® 2020 Innovation Awards winners, including three Best of Innovations accolades.

Samsung’s new 256Gb V-NAND features industry’s fastest data transfer speed, while being the first to apply the ‘Toggle DDR 4.0’ NAND interface

New V-NAND breaks through current cell stacking limitation in 3D NAND with the industry's first 100+ layer single-tier design for superior speed and power efficiency.

The revolutionary flash technology, the sixth-generation V-NAND is perfectly suited for today’s and tomorrow’s data demands.

Samsung’s PCI Gen4-based SSD with three core software technologies will help enterprises and service providers harness the power of future technological innovations.

Samsung Electronics Co.. Ltd.. a global leader in advanced semiconductor technology solutions. has begun mass producing the industry’s first two gigabyte (GB). low power double-data-rate 3 (LPDDR3) memory. using 30 nanometer (nm) class* technology. for next-generation mobile devices.

Samsung Electronics Co.. Ltd.. the world leader in advanced memory technology. today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM. which is being produced at a 20 nanometer (nm) class* process node.

the world leader in advanced memory technology. today announced the industry’s first mass production of three gigabyte (GB) low power double data rate 3 (LPDDR3) mobile DRAM. the highest density mobile memory solution for next-generation smartphones. which will bring a generation shift to the market from the 2GB packages that are widely used in current mobile devices

Samsung Electronics Co.. Ltd.. the world leader in advanced memory technology. announced today that it has begun mass producing its six gigabit (Gb) low-power double data rate 3 (LPDDR3) mobile DRAM.

Samsung Electronics Co.. Ltd.. announced today that it is mass producing the industry’s first 12-gigabit (Gb) LPDDR4 (low power. double data rate 4) mobile DRAM. based on its advan

Samsung introducing the industry’s first 8-gigabyte (GB) LPDDR4 (low power. double data rate 4) mobile DRAM package

The new 3-stack ISOCELL Fast 2L3 with integrated DRAM supports super-slow motion, low-light shooting, real-time HDR imaging, while minimizing picture distortion

Discover Samsung's semiconductor solutions that are used in a wide array of automotive applications.

Utilizing the industry's first 24Gb LPDDR4X chips, this highest-capacity uMCP makes 10+ GB memory solutions available to mid-market smartphone users.