Εικόνα | KEY Part # / Κατασκευαστής | Περιγραφή / PDF | Ποσότητα / RFQ |
---|---|---|---|
Samsung Semiconductor |
DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced. |
19545τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced. |
22422τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced. |
26307τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production. |
23964τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production. |
26841τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production. |
22019τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 8 GB 1R x 8 2933 Mbps 1.2 V 288 (1G x 8) x 8 Sample. |
15524τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 16 EOL announced. |
23743τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 16 EOL announced. |
18720τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 16 EOL announced. |
21443τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 16 Mass Production. |
23870τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 16 Mass Production. |
14732τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 16 Mass Production. |
14245τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 16 Mass Production. |
26082τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 16 GB 2R x 8 2933 Mbps 1.2 V 288 (1G x 8) x 16 Sample. |
21133τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 32 GB 2R x 8 2666 Mbps 1.2 V 288 (2G x 8) x 16 Mass Production. |
26485τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 4 GB 1R x 16 2133 Mbps 1.2 V 288 (512M x 16) x 4 EOL announced. |
15609τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 4 GB 1R x 16 2400 Mbps 1.2 V 288 (512M x 16) x 4 EOL announced. |
23893τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 4 GB 1R x 16 2666 Mbps 1.2 V 288 (512M x 16) x 4 EOL announced. |
19221τεμ |
|
Samsung Semiconductor |
DDR4 UDIMM 4 GB 1R x 16 2133 Mbps 1.2 V 288 (512M x 16) x 4 Mass Production. |
23500τεμ |